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參數(shù)資料
| 型號(hào)： | 2SJ297S |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET(P溝道MOSFET) |
| 中文描述： | 硅P溝道場(chǎng)效應(yīng)晶體管性（P溝道MOSFET的） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 23K |
| 代理商： | 2SJ297S |
2SJ297(L), 2SJ297(S)
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
I
AP
*
E
AR
*
Pch*
–60
V
Gate to source voltage
±20
V
Drain current
–20
A
Drain peak current
1
–80
A
Body to drain diode reverse drain current
–20
A
Avalanche current
3
–20
A
Avalanche energy
3
34
mJ
Channel dissipation
2
60
W
Channel temperature
Tch
150
°C
Storage temperature
Notes 1. PW
≤
10 μs, duty cycle
≤
1%
2. Value at T
C
= 25°C
3. Value at Tch = 25°C, Rg
≥
50
Tstg
–55 to +150
°C
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