- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370097 > 2SJ307 (Sanyo Electric Co.,Ltd.) P-Channel Silicon MOSFET for Ultrahigh-Speed Switching Applications(用于超高速轉(zhuǎn)換應(yīng)用的P溝道MOSFET) PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SJ307 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | P-Channel Silicon MOSFET for Ultrahigh-Speed Switching Applications(用于超高速轉(zhuǎn)換應(yīng)用的P溝道MOSFET) |
| 中文描述： | 個(gè)P - MOSFET的超高通道硅高速開(kāi)關(guān)應(yīng)用（用于超高速轉(zhuǎn)換應(yīng)用的P溝道MOSFET的） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 115K |
| 代理商： | 2SJ307 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
2SJ307
Ultrahigh-Speed Switching Applications
Ordering number:EN4317A
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40599TS/53093TH (KOTO) AX-9094 No.4317–1/4
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2063A
[2SJ307]
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
· Micaless package facilitating mounting.
C
C
Electrical Characteristics
at Ta = 25C
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
Tc=25C
PW
≤
10
μ
s, duty cycle
≤
1%
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
t
U
e
e
g
g
a
V
a
V
)
C
D
s
P
(
D
r
w
e
e
(
c
o
c
o
t
t
o
P
S
S
-
D
-
G
n
D
n
D
w
o
V
V
S
S
S
S
D
G
ID
IP
D
PD
0
0
6
4
5
3
–
2
2
±
–
V
V
A
A
W
W
e
C
e
C
e
a
)
s
–
0
3
5
1
5
1
+
n
o
p
0
0
0
e
p
e
p
m
m
e
e
T
T
l
n
e
g
n
a
h
a
S
C
h
c
T
g
T
o
5
5
–
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
y
t
U
n
2
–
±
m
p
x
a
m
e
e
g
g
a
V
a
V
t
e
C
e
C
n
n
w
w
o
o
d
d
k
k
n
D
g
a
k
a
a
e
B
e
B
e
g
a
e
L
e
e
c
o
c
o
a
V
c
u
o
S
g
a
V
a
T
d
w
-
D
c
S
S
S
-
D
-
G
o
Z
-
G
f
C
r
F
V
V
S
S
S
S
D
G
S
S
S
)
S
s
)
)
S
R
R
D
G
G
|
B
B
I
I
(
(
ID
IG
VS
D
VS
G
VS
D
VS
D
ID
=
V
A
V
0
V
5
V
0
V
0
1
–
V
,
A
3
–
,
A
0
5
2
–
2
±
=
1
–
=
=
m
0
1
1
=
–
±
=
=
S
D
V
V
D
D
D
S
=
G
V
,
0
=
0
0
5
3
V
V
A
μ
A
μ
V
S
,
μ
S
G
S
–
=
–
=
–
0
=
0
m
A
V
=
e
G
S
=
1
3
0
0
0
0
0
1
1
±
5
–
–
t
e
e
e
r
n
,
V
I
I
A
5
–
e
e
S
c
n
a
m
O
e
d
A
c
o
|
3
5
5
e
c
n
a
e
R
-
S
R
)
o
S
D
G
1
7
0
1.6
1.2
0.75
1
1
10.0
1
5
3.2
7
3
2.55
2.55
2.4
4.5
2.8
0.7
2.55
2.55
2
1 2
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ308 | Ultra high-Speed Switching Applications P-Channel Silicon MOSFET(超高速轉(zhuǎn)換應(yīng)用P溝道硅MOSFET) |
| 2SJ317 | Silicon P-Channel MOS FET(P溝道MOSFET) |
| 2SJ318L | Silicon P-Channel MOS FET(P溝道MOSFET) |
| 2SJ318 | Silicon P-Channel MOS FET(P溝道MOSFET) |
| 2SJ318S | Silicon P-Channel MOS FET(P溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ307RB11LB | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SJ308 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ312 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS) |
| 2SJ312(Q) | 制造商:Toshiba 功能描述:Trans MOSFET P-CH 60V 14A 3-Pin (3+Tab) TO-220 制造商:Toshiba 功能描述:Trans MOSFET P-CH 60V 14A 3-Pin (3+Tab) TO-220 Cut Tape 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 60V 14A TO-220FL |
| 2SJ312_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DC−DC Converter, Relay Drive and Motor Drive Applications |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。