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參數(shù)資料
| 型號(hào)： | 2SJ186CYEL-E |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-62, UPAK -3 |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大?。?/td> | 89K |
| 代理商： | 2SJ186CYEL-E |
2SJ186
Rev.2.00 Sep 07, 2005 page 4 of 6
24
–40
0
40
80
120
160
Case Temperature
Tc (°C)
4
8
12
16
20
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
VGS = –10 V
ID = –0.2 A
–0.5 A
–1 A
Forward
Transfer
Admittance
|y
fs
|
(S)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
1
0.5
0.1
0.2
0.05
0.01
0.02
–0.01 –0.02
–0.05 –0.1 –0.2
–0.5
–1
Tc = –25°C
75°C
VDS = –20 V
Pulse Test
25°C
Reverse Drain Current
IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body-Drain Diode Reverse
Recovery Time
–0.01 –0.02
–0.05 –0.1 –0.2
–0.5
–1
1000
500
200
50
100
20
10
Pulse Test
Ta = 25°C
di / dt = 50 A /
s
VGS = 0
0
–10
–20
–30
–40
–50
Capacitance
C
(pF)
Drain to Source Voltage VDS (V)
Capacitance vs. Drain to Source Voltage
1000
300
100
30
10
3
1
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
0
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
0
–20
–16
–12
–8
–4
–1000
–800
–600
–400
–200
Gate
to
Source
Voltage
V
GS
(V)
Dynamic Input Characteristics
24
6
8
10
VDS
VGS
ID = –0.5 A
100
50
20
5
10
2
1
–0.02
–0.05 –0.1 –0.2
–0.5
–1
–0.01
tf
tr
td(off)
td(on)
Drain Current
ID (A)
Switching
Time
t
(ns)
Switching Characteristics
VDD = –100 V
–150 V
–200 V
VDD = –200 V
–150 V
–100 V
VGS = –10 V, VDD = –30 V
PW = 2
s, duty ≤ 1 %
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ186CYTL | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ187 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ187TD | 制造商:DC 功能描述:* |
| 2SJ188 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ188FA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 2A I(D) | TO-252VAR |
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