- 您現在的位置：買賣IC網 > PDF目錄49986 > 2SJ186CYEL-E 500 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數資料
| 型號： | 2SJ186CYEL-E |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-62, UPAK -3 |
| 文件頁數： | 4/9頁 |
| 文件大小： | 89K |
| 代理商： | 2SJ186CYEL-E |
2SJ186
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–200
V
Gate to source voltage
VGSS
±15
V
Drain current
ID
–0.5
A
Drain peak current
ID (pulse)
Note 1
–1.0
A
Body to drain diode reverse drain current
IDR
–0.5
A
Channel dissipation
Pch
Note 2
1
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. When using the alumina ceramic board (12.5
× 20 × 0.7 mm)
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–200
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±15
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±12 V, VDS = 0
Zero gate voltage drain current
IDSS
—
–50
A
VDS = –160 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
–2.0
—
–4.0
V
ID = –1 mA, VDS = –10 V
RDS (on)
—
8.0
12.0
ID = –0.25 A, VGS = –10 V
Note 3
Static drain to source on state resistance
RDS (on)
—
10.0
15.0
ID = –1 A, VGS = –10 V
Note 3
Forward transfer admittance
|yfs|
0.18
0.3
—
S
ID = –0.25 A, VDS = –10 V
Note 3
Input capacitance
Ciss
—
75
—
pF
Output capacitance
Coss
—
32
—
pF
Reverse transfer capacitance
Crss
—
5
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
—
6
—
ns
Rise time
tr
—
6
—
ns
Turn-off delay time
td (off)
—
17
—
ns
Fall time
tf
—
15
—
ns
ID = –0.25 A
VGS = –10 V
RL = 120
Body to drain diode forward voltage
VDF
—
0.95
—
V
IF = –0.5 A, VGS = 0
Body to drain diode reverse recovery time
trr
—
100
—
ns
IF = –0.5 A, VGS = 0
diF/dt = 50 A/
s
Note:
3. Pulse test
相關PDF資料 |
PDF描述 |
|---|---|
| 2SJ190 | 1 A, 60 V, 1.6 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ193 | 1 A, 100 V, 3.5 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ197-AZ | 1.5 A, 60 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ197-T1 | 1500 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ197 | 1.5 A, 60 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ186CYTL | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ187 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ187TD | 制造商:DC 功能描述:* |
| 2SJ188 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ188FA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 2A I(D) | TO-252VAR |
發(fā)布緊急采購，3分鐘左右您將得到回復。