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參數資料
| 型號： | 2SJ186CYEL-E |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-62, UPAK -3 |
| 文件頁數： | 5/9頁 |
| 文件大小： | 89K |
| 代理商： | 2SJ186CYEL-E |
2SJ186
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–1.0
0
–0.2
–0.4
–0.6
–0.8
0
–10
–20
–30
–40
–50
–1.0
0
–0.2
–0.4
–0.6
–0.8
0
–2–4–6–8
–10
–25°C
1.2
0
0.4
0.8
0
50
100
150
VDS = –20 V
Pulse Test
–10 V
–8 V
–6 V
–5 V
VGS = –4 V
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–1
–0.1
–0.01
–0.001
–1
–3
–10
–30
–100 –300 –1000
–10
Ta = 25°C
PW
= 10
ms
(1
shot)
DC
Operation
(Tc
=
25°
C)
1 ms
10
s
100
s
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–20
0
–4
–8
–12
–16
0
–4
–8
–12
–16
–20
Pulse Test
ID = –0.2 A
–1 A
–0.5 A
Drain Current
ID (A)
Static
D
ra
in
t
o
S
o
u
rc
e
o
n
S
ta
te
R
e
s
is
ta
n
c
e
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
20
10
2
5
1
–0.05
–0.2
–0.5
–0.01
–0.1
–1
–0.02
100
50
VGS = –10 V
–15 V
Pulse Test
25°C
Tc = 75°C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ186CYTL | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ187 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ187TD | 制造商:DC 功能描述:* |
| 2SJ188 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ188FA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 2A I(D) | TO-252VAR |
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