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參數(shù)資料
| 型號： | 2SJ186 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 2SJ186 |
2SJ186
1,000
–1
Reverse Drain Current I
DR
(A)
R
r
(
Body to Drain Diode Reverse
Recovery Time
–0.01
500
200
100
50
20
10
–0.02
–0.05 –0.1 –0.2
–0.5
Pulse Test
Ta = 25°C
di/dt = 50 A/
μ
s
V
GS
= 0
1,000
–20
–50
Drain to Source Voltage V
DS
(V)
C
–10
–30
–40
Capacitance vs.
Drain to Source Voltage
0
100
10
1
V
= 0
f = 1 MHz
Crss
Coss
Ciss
0
4
10
Gate Charge Qg (nc)
D
D
Dynamic Input Characteristics
–200
–800
2
6
8
0
–600
–400
0
–4
–16
–20
–12
–8
G
G
–1,000
V
= –100 V
–150 V
–200 V
V
= –200 V
–150 V
–200 V
V
DS
V
GS
I
D
= –0.5 A
100
–0.05
Drain Current I
D
(A)
–1
S
–0.02
–0.1
–0.5
–0.01
–0.2
Switching Characteristics
50
20
10
5
2
1
V
GS
= 10 V
PW = 2
μ
s
duty < 1%
V
DD
=
t
f
t
d (on)
t
r
t
d (off)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ186CY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
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| 2SJ187 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ187TD | 制造商:DC 功能描述:* |
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