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參數(shù)資料
| 型號： | 2SJ186 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 2SJ186 |
2SJ186
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
–200
V
Gate to source voltage
±
15
V
Drain current
–0.5
A
Drain peak current
–1.0
A
Body to drain diode reverse drain current
–0.5
A
Channel dissipation
1
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. When using the alumina ceramic board (12.5
×
20
×
0.7 mm)
Tstg
–55 to +150
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