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參數資料
| 型號： | 2SJ186 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場效應晶體管 |
| 文件頁數： | 5/9頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 2SJ186 |
2SJ186
5
–20
–8
–20
Gate to Source Voltage V
GS
(V)
D
D
–16
–4
–4
–12
–16
0
–8
–12
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
–0.5 A
I
D
= –0.2 A
–1 A
100
–0.05
Drain Current I
D
(A)
–1
S
R
D
)
–0.02
–0.1
–0.01
Static Drain to Source on State
Resistance vs. Drain Current
–0.2
50
20
10
5
2
1
V
GS
= –10 V
–15 V
Pulse Test
–0.5
24
40
160
Case Temperature T
C
(°C)
S
R
D
)
20
8
0
80
120
4
12
16
Static Drain to Source on State
Resistance vs. Case Temperature
–40
Pulse Test
V
GS
= –10 V
I
D
= –0.2 A
–0.5 A
–1 A
1.0
–0.1
Drain Current I
D
(A)
F
y
0.5
0.05
0.01
0.1
0.2
Forward Transfer Admittance
vs. Drain Current
–0.01
0.02
Pulse Test
V
DS
= –20 V
T
C
= –25°C
75°C
25°C
–0.02
–0.05 –0.1 –0.2
–0.5
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相關代理商/技術參數 |
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|---|---|
| 2SJ186CY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ186CYEL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ186CYTL | 制造商:Renesas Electronics Corporation 功能描述: |
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| 2SJ187TD | 制造商:DC 功能描述:* |
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