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參數(shù)資料
| 型號： | 2SJ160 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 38K |
| 代理商： | 2SJ160 |
2SJ160, 2SJ161, 2SJ162
5
–10
–0.5
–10
Drain Current ID (A)
Drain
to
Source
Saturation
Voltage
V
DS
(sat)
(V)
–5
–0.5
–0.2
–1.0
–2
–0.1
–1.0
–2
Drain to Source Saturation Voltage
vs. Drain Current
VGD = 0
–0.2
–0.1
–5
75
25
T C
= –25°C
–10
–4
–10
Gate to Source Voltage VGS (V)
Drain
to
Source
Voltage
V
DS
(V)
–8
–4
–2
–6
–8
0
–6
Drain to Source Voltage vs.
Gate to Source Voltage
ID = –1 A
–2
–5
1,000
410
Gate to Source Voltage VGS (V)
Input
Capacitance
Ciss
(pF)
500
26
8
100
Input Capacitance vs.
Gate to Source Voltage
VDS = –10 V
f = 1 MHz
200
0
3.0
30 k
Frequency f (Hz)
Forward
Transfer
Admittance
yfs
(S)
1.0
10 k
0.3
Forward Transfer Admittance
vs. Frequency
0.1
0.03
0.01
0.003
100 k 300 k
1 M
3 M
10 M
TC = 25°C
VDS = –10 V
ID = –2 A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ160-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ161 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ161(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ161-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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