- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄351755 > 2SJ160 PDF資料下載
參數(shù)資料
| 型號： | 2SJ160 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 38K |
| 代理商： | 2SJ160 |
2SJ160, 2SJ161, 2SJ162
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
2SJ160
V
(BR)DSX
–120
—
V
I
D = –10 mA , VGS = 10 V
breakdown voltage
2SJ161
–140
—
V
2SJ162
–160
—
V
Gate to source breakdown
voltage
V
(BR)GSS
±15
—
V
I
G = ±100 A, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–0.15
—
–1.45
V
I
D = –100 mA, VDS = –10 V
Drain to source saturation
voltage
V
DS(sat)
—
–12
V
I
D = –7 A, VGD = 0*
1
Forward transfer admittance
|y
fs|
0.7
1.0
1.4
S
I
D = –3 A, VDS = –10 V*
1
Input capacitance
Ciss
—
900
—
pF
V
GS = 5 V, VDS = –10V,
Output capacitance
Coss
—
400
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
40
—
pF
Turn-on time
t
on
—
230
—
ns
V
DD = –20 V, ID = –4 A
Turn-off time
t
off
—
110
—
ns
Note:
1. Pulse test
相關PDF資料 |
PDF描述 |
|---|---|
| 2SJ79 | |
| 2N7000 | N-channel enhancement mode vertical D-MOS transistor |
| 2N683 | 25 and 35 Amp RMS SCRs |
| 206A | Interface IC |
| 206B | Interface IC |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ160-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ161 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ161(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ161-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
發(fā)布緊急采購，3分鐘左右您將得到回復。