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參數(shù)資料
| 型號(hào)： | 2SJ160 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 38K |
| 代理商： | 2SJ160 |
2SJ160, 2SJ161, 2SJ162
4
150
100
50
0
50
100
150
Case Temperature TC (°C)
Power vs. Temperature Derating
Channel
Dissipation
Pch
(W)
–20
–5
–1.0
–0.2
–20
–100
–500
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–10
–0.5
–5
–10
–50
–200
Ta = 25°C
DC
Operation
(T
C = 25°C)
PW
=
100
ms
(1
Shot)
PW
=
10
ms
(1
Shot)
ID max (Continuous)
(–14.3 V,
–7 A)
(–140 V, –0.71 A)
(–160 V, –0.63 A)
2SJ160
2SJ161
2SJ162
(–120 V, –0.83 A)
–2
–10
–20
–50
Drain to Source Voltage VDS (V)
Typical Output Characteristics
–8
–2
–10
–30
–40
TC = 25°C
0
–4
–6
–2
V
GS = 0
Drain
Current
I
D
(A)
–1 V
–3
–4
–5
–6
–7
–8
–9
Pch
= 100
W
–1.0
–0.8
–2.0
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–0.8
–0.2
–0.4
–1.2
–1.6
0
–0.4
–0.6
VDS = –10 V
75
T C
=
–25°C 25
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ160-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ161 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ161(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ161-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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