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參數(shù)資料
| 型號： | 2SD970 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管) |
| 中文描述： | 硅npn型三重?cái)U(kuò)散（三倍擴(kuò)散npn型晶體管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 36K |
| 代理商： | 2SD970 |
2SD970(K)
2
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
I
C
= 25 mA, R
BE
=
∞
Collector to emitter breakdown
voltage
V
(BR)CEO
120
—
—
V
Emitter to base breakdown
voltage
V
(BR)EBO
7
—
—
V
I
E
= 50 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
V
CE(sat)1
—
—
100
μA
V
CB
= 120 V, I
E
= 0
V
CE
= 100 V, R
BE
= _
V
CE
= 3 V, I
C
= 4 A*
I
C
= 4 A, I
B
= 8 mA*
—
—
10
μA
DC current transfer ratio
1000
—
20000
1
Collector to emitter saturation
voltage
—
—
1.5
V
1
V
CE(sat)2
V
BE(sat)1
—
—
3.0
V
I
C
= 8 A, I
B
= 80 mA*
I
C
= 4 A, I
B
= 8 mA*
1
Base to emitter saturation
voltage
—
—
2.0
V
1
V
BE(sat)2
t
on
t
stg
t
f
—
—
3.5
V
I
C
= 8 A, I
B
= 80 mA*
I
C
= 4 A, I
B1
= –I
B2
= 8 mA
1
Turn on time
—
0.4
—
μs
Storage time
—
5.4
—
μs
Fall time
Note:
—
1.1
—
μs
1. Pulse test.
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| 2SD974 | Silicon NPN Epitaxial |
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| 2SD975 | Power Bipolar Transistors |
| 2SH11 | Silicon N-Channel IGBT |
| 2SH12 | Silicon N-Channel IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD970(K) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 8A I(C) | TO-220AB |
| 2SD970K | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Triple Diffused |
| 2SD970K(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SD971 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR MT-25300V 6A 50W BCE |
| 2SD972 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANKEN TRANS. MT-25 50V 4A 30W BCE |
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