參數(shù)資料
型號: 2SH12
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel IGBT
中文描述: 硅N溝道IGBT的
文件頁數(shù): 1/8頁
文件大小: 43K
代理商: 2SH12
Application
High speed power switching
Features
High speed switching
Low on saturation voltage
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
———————————————————————————————————————————
Collector to emitter voltage
V
CES
———————————————————————————————————————————
Gate to emitter voltage
V
GES
———————————————————————————————————————————
Collector current
I
C
———————————————————————————————————————————
Collector peak current
ic(peak)
———————————————————————————————————————————
Collector dissipation
P
C
*
———————————————————————————————————————————
Channel temperature
T
j
———————————————————————————————————————————
Storage temperature
Tstg
———————————————————————————————————————————
* Value at Tc = 25°C
Symbol
Ratings
Unit
600
V
±20
V
15
A
30
A
60
W
150
°C
–55 to +150
°C
1
2
3
TO–220AB
1
2
3
1. Gate
2. Collector
3. Emitter
1
2SH12
Silicon N-Channel IGBT
1st. Edition
Feb. 1995
ADE–208–275 (Z)
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2SH13 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel IGBT
2SH14 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel IGBT
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2SH17 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel IGBT