- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371530 > 2SD2474 (PANASONIC CORP) Silicon PNP epitaxial planer type(For low-frequency amplification) PDF資料下載
參數(shù)資料
| 型號： | 2SD2474 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type(For low-frequency amplification) |
| 中文描述： | 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-62, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 2SD2474 |
1
Transistor
2SB1612
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SD2474
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ SC–62
Mini Power Type Package
4.5
±
0.1
1.6
±
0.2
2
±
0
2
±
0
0
1
+
–
4
+
–
3.0
±
0.15
1.5
±
0.1
0.4
±
0.08
0.5
±
0.08
1.5
±
0.1
0.4
±
0.04
45
°
marking
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
–10
–10
–7
–2.4
–2
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –7V, I
E
= 0
I
C
= –10
μ
A, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CE
= –2V, I
C
= 200mA
I
C
= –1A, I
B
= –10mA
V
CB
= –6V, I
E
= 50mA, f = 200MHz
V
CB
= –6V, I
E
= 0, f = 1MHz
min
–10
–10
–7
200
typ
– 0.19
60
100
max
–1
800
– 0.25
Unit
μ
A
V
V
V
V
MHz
pF
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
Marking symbol :
2F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2479 | Silicon NPN epitaxial planar type |
| 2SD2480 | NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS) |
| 2SD2481 | NPN EPITAXIAL TYPE (PULSE MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS) |
| 2SD2486 | Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
| 2SD2488 | 2SD2488 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD24790RA | 功能描述:TRANS NPN 100VCEO 2A MT-3 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD2480(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SD2495 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR FM20 110V 6A 30W BCE |
| 2SD2498(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 600V 6A 3-Pin(3+Tab) TO-3P(HIS) |
| 2SD2499 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR SUB: B1BAER000011 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。