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參數資料
| 型號： | 2SD2479 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN epitaxial planar type |
| 中文描述： | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MT-3-A1, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 82K |
| 代理商： | 2SD2479 |
Power Transistors
2SD2479
Silicon NPN epitaxial planar type
1
Publication date: February 2003
SJD00269BED
For low-frequency amplification
■
Features
High forward current transfer ratio h
FE
Allowing supply with the radial taping
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 100
μ
A, I
E
= 0
120
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 1 mA, I
B
= 0
I
E
= 100
μ
A, I
C
= 0
V
CB
=
25 V, I
E
=
0
V
EB
=
4 V, I
C
=
0
V
CE
=
10 V, I
C
=
1 A
I
C
=
1 A, I
B
=
1 mA
I
C
=
1 A, I
B
=
1 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
100
V
Emitter-base voltage (Collector open)
V
EBO
I
CBO
5
V
Collector-base cutoff current (Emitter open)
0.1
μ
A
μ
A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1, 2
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
I
EBO
1
h
FE
4
000
40
000
V
CE(sat)
1.5
V
V
BE(sat)
2
V
Transition frequency
f
T
150
MHz
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
120
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
100
V
Emitter-base voltage (Collector open)
5
V
Collector current
I
C
2
A
Peak collector current
I
CP
P
C
3
A
Collector power dissipation
1.5
W
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
h
FE
4
000 to 10
000 8
000 to 20
000 16
000 to 40
000
7.5
±
0.2
0.65
±
0.1
2
±
0
0.7
±
0.1
1.15
±
0.2
2.5
±
0.2
2.5
±
0.2
0.85
±
0.1
1.0
±
0.1
0.7
±
0.1
1.15
±
0.2
0.5
±
0.1
1
0.8 C
2
3
0.4
±
0.1
4.5
±
0.2
0.8 C
0.8 C
3
±
0
1
±
1
1
±
0
2
±
0
9
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
Internal Connection
B
≈
200
C
E
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