參數(shù)資料
型號: 2SD2486
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)
中文描述: 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220F
封裝: TO-220, FULL PACK-3
文件頁數(shù): 1/2頁
文件大?。?/td> 70K
代理商: 2SD2486
1
Power Transistors
2SD2486
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
I
Features
G
High forward current transfer ratio h
FE
which has satisfactory
linearity
G
Low collector to emitter saturation voltage V
CE(sat)
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
BP
P
C
T
j
T
stg
Ratings
60
60
7
8
4
2
25
2
150
–55 to +150
Unit
V
V
V
A
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 60V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 2V, I
C
= 0.8A
V
CE
= 2V, I
C
= 2A
I
C
= 2A, I
B
= 50mA
I
C
= 2A, I
B
= 50mA
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
I
C
= 2A, I
B1
= 50mA, I
B2
= –50mA,
V
CC
= 50V
min
60
500
60
typ
1000
70
0.5
3.6
1.1
max
10
10
2000
0.5
1.5
Unit
μ
A
μ
A
V
V
V
MHz
μ
s
μ
s
μ
s
*
h
FE1
Rank classification
Rank
Q
R
h
FE1
500 to 1200 800 to 2000
T
C
=25
°
C
Ta=25
°
C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
4
0.5
+0.2
–0.1
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.25
5.08
±
0.5
2
1
3
2.7
±
0.2
4.2
±
0.2
4
±
0
φ
3.1
±
0.1
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