- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371530 > 2SD2527 (PANASONIC CORP) Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) PDF資料下載
參數(shù)資料
| 型號： | 2SD2527 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
| 中文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220D |
| 封裝： | TO-220D, FULL PACK-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 2SD2527 |
1
Power Transistors
2SD2527
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
I
Features
G
High foward current transfer ratio h
FE
G
Satisfactory linearity of foward current transfer ratio h
FE
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
80
60
6
8
4
1
40
2.0
150
–55 to +150
Unit
V
V
V
A
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Storage time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE*
V
CE(sat)
f
T
t
stg
Conditions
V
CB
= 80V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 0.8A
I
C
= 3A, I
B
= 0.075A
V
CE
= 12V, I
C
= 0.3A, f = 10MHz
I
C
= 3A, I
B1
= 0.06A, I
B2
= – 0.06A, V
CC
= 50V
min
60
500
typ
30
20
max
100
100
100
2000
0.7
Unit
μ
A
μ
A
μ
A
V
V
MHz
μ
s
*
h
FE
Rank classification
Rank
Q
P
h
FE
500 to 1200 800 to 2000
T
C
=25
°
C
Ta=25
°
C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
1
9.9
±
0.3
1
±
0
1
±
0
4
±
0
4.6
±
0.2
2.9
±
0.2
0.8
±
0.1
1.4
±
0.2
1.6
±
0.2
2
3
φ
3.2
±
0.1
2.6
±
0.1
0.55
±
0.15
2.54
±
0.3
5.08
±
0.5
3
±
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2528 | Silicon NPN epitaxial planar type(For power amplification with high forward current transfer ratio) |
| 2SD2530 | Silicon NPN triple diffusion planer type Darlington(For power amplification) |
| 2SD2531 | NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) |
| 2SD2536 | NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING APPLICATIONS) |
| 2SD2538 | Silicon NPN triple diffusion planer type Darlington(For power amplification) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2528 | 功能描述:TRANS NPN LF 60VCEO 5A TO-220D RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD2536(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans Darlington NPN 115V 2A 3-Pin LSTM |
| 2SD2537T100 | 制造商:ROHM Semiconductor 功能描述: |
| 2SD2537T100V | 功能描述:兩極晶體管 - BJT NPN 25V 1.2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD2539 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。