參數(shù)資料
型號: 2SD2538
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon NPN triple diffusion planer type Darlington(For power amplification)
中文描述: 2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220D
封裝: TO-220D, FULL PACK-3
文件頁數(shù): 1/1頁
文件大?。?/td> 45K
代理商: 2SD2538
Power Transistors
2SD2538
Silicon NPN triple diffusion planer type Darlington
1
For power amplification
I
Features
High forward current transfer ratio h
FE
Full-pack package which can be installed to the heat sink with one
screw
I
Absolute Maximum Ratings
T
C
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
V
EBO
I
CP
60
V
Emitter to base voltage
5
V
Peak collector current
4
A
Collector current
I
C
P
C
2
A
Collector power
dissipation
T
C
=
25
°
C
T
a
=
25
°
C
35
W
2
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
I
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
=
60 V, I
E
=
0
V
CE
=
30 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
I
C
=
30 mA, I
B
=
0
V
CE
=
4 V, I
C
=
1 A
V
CE
=
4 V, I
C
=
2 A
I
C
=
2 A, I
B
=
8 mA
V
CE
=
4 V, I
C
=
2 A
V
CE
=
10 V, I
C
=
0.5 A, f
=
1 MHz
I
C
=
2 A, I
B1
=
8 mA, I
B2
=
8 mA
V
CC
=
50 V
1
mA
I
CEO
I
EBO
V
CEO
2
mA
Emitter cutoff current
2
mA
Collector to emitter voltage
60
V
Forward current transfer ratio
h
FE1
h
FE2
*
V
CE(sat)
1 000
2 000
10 000
Collector to emitter saturation voltage
2.5
V
Base to emitter voltage
V
BE
f
T
t
on
2.8
V
Transition frequency
20
MHz
Turn-on time
0.5
μ
s
μ
s
μ
s
Storage time
t
stg
t
f
4.0
Fall time
1.0
1.4
±
0.2
1.6
±
0.2
0.8
±
0.1
0.55
±
0.15
2.54
±
0.30
5.08
±
0.50
1
2
3
2.6
±
0.1
2.9
±
0.2
4.6
±
0.2
φ
3.2
±
0.1
3
±
0
9.9
±
0.3
1
±
0
1
±
0
4
±
0
S
1: Base
2: Collector
3: Emitter
TO-220D Full Pack Package
Internal Connection
B
C
E
Note)*: Rank classification
Rank
P
Q
h
FE2
4 000 to 10 000
2 000 to 5 000
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