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參數(shù)資料
| 型號(hào)： | 2SD2467 |
| 廠(chǎng)商： | PANASONIC CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Silicon NPN epitaxial planar type(For power switching) |
| 中文描述： | 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220E |
| 封裝： | TO-220E, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | 2SD2467 |
1
Power Transistors
2SD2467
Silicon NPN epitaxial planar type
For power switching
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
G
Satisfactory linearity of foward current transfer ratio h
FE
G
Large collector current I
C
G
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
130
80
7
6
3
30
2
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 100V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 0.5A
I
C
= 2A, I
B
= 0.1A
I
C
= 2A, I
B
= 0.1A
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
I
C
= 0.5A, I
B1
= 50mA, I
B2
= –50mA,
V
CC
= 50V
min
80
45
90
typ
30
0.5
2.5
0.15
max
10
50
260
0.5
1.5
Unit
μ
A
μ
A
V
V
V
MHz
μ
s
μ
s
μ
s
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
90 to 180
130 to 260
T
C
=25
°
C
Ta=25
°
C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
9.9
±
0.3
2
3
1
4.6
±
0.2
2.9
±
0.2
2.6
±
0.1
2.54
±
0.2
5.08
±
0.4
0.75
±
0.1
1.2
±
0.15
1.45
±
0.15
1
±
0
1
+
–
φ
3.2
±
0.1
3
±
0
8
±
0
4
±
0
S
0.7
±
0.1
7
°
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