參數(shù)資料
型號(hào): 2SD2161
元件分類(lèi): 功率晶體管
英文描述: 5 A, 100 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, ISOLATED TO-220, FULL PACK-3
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 246K
代理商: 2SD2161
Data Sheet D14864EJ2V0DS
2
2SD2161
ELECTRICAL CHARACTERISTICS (TA = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 100 V, IE = 0 A
1.0
A
hFE1
VCE = 2.0 V, IC = 2.0 A
Note
2,000
8,000
20,000
DC current gain
hFE2
VCE = 2.0 V, IC = 4.0 A
Note
500
Collector saturation voltage
VCE(sat)
IC = 2.0 A, IB = 2.0 mA
Note
1.5
V
Base saturation voltage
VBE(sat)
IC = 2.0 A, IB = 2.0 mA
Note
2.0
V
Gain bandwidth product
fT
VCE = 5.0 V, IC = 0.5 A
30
MHz
Collector capacitance
Cob
VCB = 10 V, IE = 0 A, f = 1.0 MHz
35
pF
Turn-on time
ton
1.0
s
Storage time
tstg
3.5
s
Fall time
tf
IC = 2.0 A, RL = 25
,
IB1 =
IB2 = 2.0 mA, VCC 50 V
Refer to the test circuit.
1.2
s
Note Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE1
2,000 to 5,000
4,000 to 10,000
8,000 to 20,000
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD2161-AZ-K 制造商:Renesas Electronics Corporation 功能描述:
2SD2161K 制造商:NEC 制造商全稱(chēng):NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220VAR
2SD2161L 制造商:NEC 制造商全稱(chēng):NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220VAR
2SD2161M 制造商:NEC 制造商全稱(chēng):NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220VAR
2SD2162 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:SILICON POWER TRANSISTOR