參數(shù)資料
型號: 2SD2161
元件分類: 功率晶體管
英文描述: 5 A, 100 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, ISOLATED TO-220, FULL PACK-3
文件頁數(shù): 3/8頁
文件大小: 246K
代理商: 2SD2161
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confirm that this is the latest version.
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1998
Document No. D14864EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD2161
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The 2SD2161 is a Darlington power transistor that can directly drive
from the IC output.
This transistor is ideal for motor drivers and
solenoid drivers in such as OA and FA equipment.
In
addition,
a
small
resin-molded
insulation
type
package
contributes to high-density mounting and reduction of mounting cost.
FEATURES
High hFE due to Darlington connection
hFE
≥ 2,000 (VCE = 2.0 V, IC = 2.0 A)
Full mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
±5.0
A
Collector current (pulse)
IC(pulse)
PW
≤ 300
s,
duty cycle
≤ 10%
±10
A
Base current (DC)
IB(DC)
0.5
A
TC = 25
°C
20
W
Total power dissipation
PT
TA = 25
°C
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
ORDERING INFORMATION
Ordering Name
Package
2SD2161
Isolated TO-220
(Isolated TO-220)
INTERNAL EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD2161-AZ-K 制造商:Renesas Electronics Corporation 功能描述:
2SD2161K 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220VAR
2SD2161L 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220VAR
2SD2161M 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220VAR
2SD2162 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SILICON POWER TRANSISTOR