- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄31707 > 2SB1508 12 A, 50 V, PNP, Si, POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SB1508 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | TO-3PML, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 48K |
| 代理商： | 2SB1508 |
2SB1508 / 2SD2281
No.3714-1/4
Applications
Relay drivers, high-speed inverters, converters.
Features
Low collector-to-emitter saturation voltage: VCE(sat)=--0.5V (PNP), 0.4V (NPN) max.
Wide ASO and highly registant to breakdown.
Micaless package facilitating easy mounting.
Specifications ( ) : 2SB1508
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)60
V
Collector-to-Emitter Voltage
VCEO
(--)50
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)12
A
Collector Current (Pulse)
ICP
(--)25
A
Collector Dissipation
PC
3.0
W
Tc=25°C45
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)0.1
mA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)0.1
mA
DC Current Gain
hFE1VCE=(--)2V, IC=(--)1A
70*
280*
hFE2VCE=(--)2V, IC=(--)5A
30
Gain-Bandwidth Product
fT
VCE=(--)5V, IC=(--)1A
10
MHz
Continued on next page.
* : The 2SBB1508 / 2SD2281 are classified by 1A hFE as follows :
Rank
Q
R
S
hFE
70 to 140
100 to 200
140 to 280
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN3714A
D0606FA TI IM TC-00000359 / N1098HA (KT) / 5111MH, JK (KOTO)
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
2SB1508 / 2SD2281
PNP / NPN Epitaxial Planar Silicon Transistors
High-Current Switching
Applications
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2281R | 12 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 2SB1508Q | 12 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 2SD2281 | 12 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 2SB1508S | 12 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 2SD2281Q | 12 A, 50 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1548 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR SUBBING WITH 2SB1548A-P |
| 2SB1548A | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1548AP | 功能描述:TRANS PNP LF 80VCEO 3A TO-220D RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1548A-P | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1548PQAU | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。