參數(shù)資料
型號(hào)： 2SD2015
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴(kuò)散平面達(dá)林頓晶體管)
中文描述： 4 A, 120 V, NPN, Si, POWER TRANSISTOR
封裝： FM20, TO-220F, 3 PIN
文件頁(yè)數(shù)： 1/1頁(yè)
文件大小： 26K
代理商： 2SD2015
140
Darlington
2S D2015
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
Pc–Ta Derating
0
0
1
2
4
3
2
1
Collector-Emitter Voltage V
CE
(V)
3
5
4
6
C
C
(
I
B
=1mA
0.3mA
0.4mA
0.5mA
0.8mA
0.6mA
Safe Operating Area
(Single Pulse)
4
1
0.1
0.5
0.03
50
500
100
1000
10000
D
F
20000
5000
Collector Current I
C
(A)
(V
CE
=4V)
10
Collector-Emitter Voltage V
CE
(V)
50
5
200
100
0.03
0.05
0.1
1
0.5
10
5
C
C
(
Without Heatsink
Natural Cooling
DC
100ms
10ms
1ms
0.5
1
5
1
10
100
1000
5
50
500
Time t(ms)
T
θ
j
(
Typ
V
CE
(sat)–I
B
Characteristics
(Typical)
0
3
2
1
0.2
5
10
1
100
50
Base Current I
B
(mA)
C
C
(
I
C
=4A
2A
1A
3A
300
μ
s
I
C
–V
BE
Temperature
Characteristics
(Typical)
0
2
1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
0
3
4
2
1
1(a m
2(em
–( )
h
FE
–I
C
Temperature
Characteristics
(Typical)
Collector Current I
C
(A)
D
F
0.05
0.03
0.5
1
4
0.1
100
50
500
1000
5000
10000
20000
(V
CE
=4V)
125C
25C
–30C
f
T
–I
E
Characteristics
(Typical)
0
–0.05 –0.1
–0.5
–1
–4
10
20
60
50
30
40
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
30
20
10
2
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
150x150x2
50x50x2
100x
100x2
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
Silicon NPN Triple Diffused Planar Transistor
Application :
Driver for Solenoid, Relay and Motor and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2015
150
120
6
4
0.5
25(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
2SD2015
10
max
10
max
120
min
2000
min
1.5
max
2.0
max
40
typ
40
typ
Unit
μ
A
mA
V
V
V
MHz
pF
Conditions
V
CB
=150V
V
EB
=6V
I
C
=10mA
V
CE
=2V, I
C
=2A
I
C
=2A, I
B
=2mA
I
C
=2A, I
B
=2mA
V
CE
=12V, I
E
=–0.1A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
External Dimensions
FM20(TO220F)
3.3
±0.2
10.1
±0.2
4
±
1
±
1
8
±
0
±
3
±
2.54
2.54
1.35
±0.15
0.85
+0.2
-0.1
1.35
±0.15
2.2
±0.2
4.2
±0.2
2.8
c0.5
2.4
±0.2
0.45
+0.2
-0.1
B
E
C
a
b
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(
)
20
I
C
(A)
2
V
(V)
–5
I
(mA)
–10
t
on
(
μ
s)
0.6typ
t
stg
(
μ
s)
5.0typ
t
f
(
μ
s)
2.0typ
I
(mA)
10
V
(V)
10
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B
C
E
(3k
)(500
)
Equivalent
circuit
相關(guān)PDF資料
PDF描述
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2SD2017 Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴(kuò)散平面達(dá)林頓晶體管)
2SD2028 Low-Frequency Power Amp Applications
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD2015_01 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Silicon NPN Triple Diffused Planar Transistor
2SD2016 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN DARL 200V 3A TO220F 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR FM20 200V 3A 25W BCE
2SD2016_01 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Silicon NPN Triple Diffused Planar Transistor
2SD2017 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington NPN 250V 6A 3-Pin (3+Tab) TO-220F Bulk 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington NPN 250V 6A 3-Pin (3+Tab) TO-220F Box 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN DARL 250V 6A TO220F 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR FM20 300V 6A 35W BCE
2SD2017_01 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Silicon NPN Triple Diffused Planar Transistor
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