參數(shù)資料
型號(hào)： 2SD2045
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴(kuò)散平面達(dá)林頓晶體管)
中文描述： 6 A, 120 V, NPN, Si, POWER TRANSISTOR
封裝： FM100, TO-3PF, 3 PIN
文件頁數(shù)： 1/1頁
文件大小： 26K
代理商： 2SD2045
143
Darlington
2S D2045
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
V
CE
(sat)–I
B
Characteristics
(Typical)
Safe Operating Area
(Single Pulse)
0
0
4
2
6
3
1
5
2
1
Collector-Emitter Voltage V
CE
(V)
3
4
5
6
C
C
(
2A
5mA
2mA
1mA
0.7mA
0.5mA
I
B
=0.4mA
0.03
0.1
1
0.5
6
5
5000
10000
1000
500
100
50
Collector Current I
C
(A)
D
F
(V
CE
=2V)
Typ
0
3
2
1
0.1
10
5
1
0.5
50
100
Base Current I
B
(mA)
C
C
(
2A
4A
I
C
=8A
0.2
1
5
0.5
1
10
100
1000
T
θ
j
(
1s
1m
10
50
5
3
100
200
0.05
0.1
1
0.5
10
20
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
DC
Without Heatsink
Natural Cooling
I
C
–V
BE
Temperature
Characteristics
(Typical)
0
3
4
5
6
2
1
0
2
1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=2V)
0.03
0.1
1
0.5
5 6
5000
10000
1000
500
100
50
Collector Current I
C
(A)
Time t(ms)
D
F
(V
CE
=2V)
125C
25C
–30C
h
FE
–I
C
Temperature
Characteristics
(Typical)
f
T
–I
E
Characteristics
(Typical)
0
–0.1
–0.5
–1
–5–6
80
100
60
40
20
120
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
Pc–Ta Derating
50
40
30
20
10
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
15 aeep
2CaTp
–CaTp
WthIninteheasnk
Without Heatsink
Silicon NPN Triple Diffused Planar Transistor
Application :
Driver for Solenoid, Motor and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2045
120
120
6
6(
Pulse
10)
1
50(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
2SD2045
10
max
10
max
120
min
2000
min
1.5
max
2.0
max
50
typ
70
typ
Unit
μ
A
mA
V
V
V
MHz
pF
Conditions
V
CB
=120V
V
EB
=6V
I
C
=10mA
V
CE
=2V, I
C
=3A
I
C
=3A, I
B
=3mA
I
C
=3A, I
B
=3mA
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
External Dimensions
FM100(TO3PF)
4.4
1.5
1.5
B
E
C
5.45
±0.1
3.3
±0.2
1
3
1.75
0
±
2.15
1.05
+0.2
-0.1
5.45
±0.1
2
±
1
9
±
5
15.6
±0.2
5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3
0.8
a
b
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
10
3
R
L
(
)
I
C
(A)
V
(V)
–5
I
(mA)
–3
t
on
(
μ
s)
0.5typ
t
stg
(
μ
s)
5.5typ
t
f
(
μ
s)
1.5typ
I
(mA)
3
V
(V)
10
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B
C
E
(2.5k
)(200
)
Equivalent
circuit
相關(guān)PDF資料
PDF描述
2SD2046 Silicon NPN Epitaxial, Darlington
2SD2048 NPN Triple Diffused Planar Silicon Darlington Transistor for Driver Application(驅(qū)動(dòng)器應(yīng)用的NPN三路硅平面擴(kuò)散型達(dá)林頓晶體管)
2SD2049 NPN Triple Diffused Planar Silicon Darlington Transistor for Driver Application(驅(qū)動(dòng)器應(yīng)用的NPN三路硅平面擴(kuò)散型達(dá)林頓晶體管)
2SD2050 NPN Triple Diffused Planar Silicon Transistor for Driver Application(驅(qū)動(dòng)器應(yīng)用的NPN三路硅平面擴(kuò)散型晶體管)
2SD2081 Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴(kuò)散平面達(dá)林頓晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD2045_01 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Silicon NPN Triple Diffused Planar Transistor
2SD2046 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial, Darlington
2SD2047 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Ratigns and Caracteristics of Fuji Power Transistor
2SD2047R 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Ratigns and Caracteristics of Fuji Power Transistor
2SD2048 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Driver Applications
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*