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參數(shù)資料
| 型號： | 2SD2045 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴散平面達林頓晶體管) |
| 中文描述： | 6 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | FM100, TO-3PF, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 26K |
| 代理商： | 2SD2045 |
143
Darlington
2S D2045
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
V
CE
(sat)–I
B
Characteristics
(Typical)
Safe Operating Area
(Single Pulse)
0
0
4
2
6
3
1
5
2
1
Collector-Emitter Voltage V
CE
(V)
3
4
5
6
C
C
(
2A
5mA
2mA
1mA
0.7mA
0.5mA
I
B
=0.4mA
0.03
0.1
1
0.5
6
5
5000
10000
1000
500
100
50
Collector Current I
C
(A)
D
F
(V
CE
=2V)
Typ
0
3
2
1
0.1
10
5
1
0.5
50
100
Base Current I
B
(mA)
C
C
(
2A
4A
I
C
=8A
0.2
1
5
0.5
1
10
100
1000
T
θ
j
(
1s
1m
10
50
5
3
100
200
0.05
0.1
1
0.5
10
20
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
DC
Without Heatsink
Natural Cooling
I
C
–V
BE
Temperature
Characteristics
(Typical)
0
3
4
5
6
2
1
0
2
1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=2V)
0.03
0.1
1
0.5
5 6
5000
10000
1000
500
100
50
Collector Current I
C
(A)
Time t(ms)
D
F
(V
CE
=2V)
125C
25C
–30C
h
FE
–I
C
Temperature
Characteristics
(Typical)
f
T
–I
E
Characteristics
(Typical)
0
–0.1
–0.5
–1
–5–6
80
100
60
40
20
120
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
Pc–Ta Derating
50
40
30
20
10
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
15 aeep
2CaTp
–CaTp
WthIninteheasnk
Without Heatsink
Silicon NPN Triple Diffused Planar Transistor
Application :
Driver for Solenoid, Motor and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2045
120
120
6
6(
Pulse
10)
1
50(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
2SD2045
10
max
10
max
120
min
2000
min
1.5
max
2.0
max
50
typ
70
typ
Unit
μ
A
mA
V
V
V
MHz
pF
Conditions
V
CB
=120V
V
EB
=6V
I
C
=10mA
V
CE
=2V, I
C
=3A
I
C
=3A, I
B
=3mA
I
C
=3A, I
B
=3mA
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
External Dimensions
FM100(TO3PF)
4.4
1.5
1.5
B
E
C
5.45
±0.1
3.3
±0.2
1
3
1.75
0
±
2.15
1.05
+0.2
-0.1
5.45
±0.1
2
±
1
9
±
5
15.6
±0.2
5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3
0.8
a
b
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
10
3
R
L
(
)
I
C
(A)
V
(V)
–5
I
(mA)
–3
t
on
(
μ
s)
0.5typ
t
stg
(
μ
s)
5.5typ
t
f
(
μ
s)
1.5typ
I
(mA)
3
V
(V)
10
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B
C
E
(2.5k
)(200
)
Equivalent
circuit
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2045_01 | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Silicon NPN Triple Diffused Planar Transistor |
| 2SD2046 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial, Darlington |
| 2SD2047 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Ratigns and Caracteristics of Fuji Power Transistor |
| 2SD2047R | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Ratigns and Caracteristics of Fuji Power Transistor |
| 2SD2048 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Driver Applications |
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