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參數(shù)資料
| 型號(hào)： | 2SD1769 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴(kuò)散平面達(dá)林頓晶體管) |
| 中文描述： | 6 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | MT-25, TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 26K |
| 代理商： | 2SD1769 |
136
Darlington
2S D1769
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area
(Single Pulse)
0
3
2
1
0.3
5
10
1
100
50
Base Current I
B
(mA)
C
C
(
0
6
8
4
2
0
2
1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=2V)
15CCsTm
2CaTp
–CaTp
0.2
1
10
5
0.5
1
10
100
50
1000
5
5000
Time t(ms)
T
θ
j
(
50
40
30
20
10
2
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
10
3
5
200
100
50
0.08
1
0.5
10
20
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
DC
1m
3s
1s
0.03
0.1
1
5
10
80
500
1000
10000
5000
Collector Current I
C
(A)
D
F
(V
CE
=2V)
0
0
2
4
8
6
2
6
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
0.7mA
1.5mA
1mA
2mA
3mA
5mA
10mA
20mA
0.5mA
0.4mA
I
B
=0.3mA
0.5
Typ
50
μ
s
I
C
=6A
2A
4A
Collector Current I
C
(A)
D
F
0.03 0.05
0.5
1
5
10
0.1
100
50
30
500
1000
5000
10000
(V
CE
=2V)
125C
25C
–30C
f
T
–I
E
Characteristics
(Typical)
–0.05
–1
–0.5
–8
–5
0
50
120
100
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
h
FE
–I
C
Temperature
Characteristics
(Typical)
Silicon NPN Triple Diffused Planar Transistor
Application :
Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD1769
120
120
6
6(
Pulse
10)
1
50(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
2SD1769
10
max
20
max
120
min
2000
min
1.5
max
2.0
max
100
typ
typ
Unit
μ
A
mA
V
V
V
MHz
pF
Conditions
V
CB
=120V
V
EB
=6V
I
C
=10mA
V
CE
=2V, I
C
=3A
I
C
=3A, I
B
=3mA
I
C
=3A, I
B
=3mA
V
CE
=12V, I
E
=–0.2A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
External Dimensions
MT-25(TO220)
B
E
2.5
2.5
C
1
±
1
4
8
±
1.35
0.65
+0.2
-0.1
10.2
±0.2
3.75
±0.2
3
±
4.8
±0.2
1.4
2.0
±0.1
a
b
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
R
L
(
)
10
I
C
(A)
3
V
(V)
–1.5
I
(mA)
–3
t
on
(
μ
s)
0.5typ
t
stg
(
μ
s)
5.5typ
t
f
(
μ
s)
1.5typ
I
(mA)
3
V
(V)
10
Weight : Approx 2.6g
a. Type No.
b. Lot No.
B
C
E
(2.5k
)(200
)
Equivalent
circuit
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD177 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTORTO-3120V 10A 100W BEC |
| 2SD1770A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR |
| 2SD1772A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO220FA200V 1A 2W BCE |
| 2SD1773 | 功能描述:TRANS NPN 120VCEO 8A TO-220F RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD1774A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR |
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