參數(shù)資料
型號(hào): 2SD1758TL/R
元件分類: 小信號(hào)晶體管
英文描述: 2000 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: CPT3, SC-63, 3 PIN
文件頁數(shù): 2/3頁
文件大?。?/td> 151K
代理商: 2SD1758TL/R
2/2
www.rohm.com
c
2010 ROHM Co., Ltd. All rights reserved.
2010.04 - Rev.C
Data Sheet
2SD1758 / 2SD1862
Packaging specifications and hFE
Type
hFE
TL
2500
TV2
2500
2SD1758
2SD1862
QR
Package
Taping
Code
Basic ordering
unit (pieces)
hFE values are classified as follows :
Item
hFE
R
180 to 390
Q
120 to 270
Electrical characteristic curves
COLLECTOR
CURRENT
:
I
C
(mA)
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.1 Grounded emitter propagation
characteristics
02.0
1000
2000
1
200
500
100
20
50
10
2
5
0.2
0.6
0.4
0.8 1.0 1.2 1.4 1.6 1.8
Ta
=25°C
VCE
=3V
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.2 Grounded emitter output
characteristics
0
0.1
0.2
0.3
0.4
0.5
0.4
0.8
1.2
1.6
2.0
0
Ta
=25°C
IB
=0A
3.0mA
2.7mA
2.4mA
2.1mA
1.8mA
1.5mA
1.2mA
0.9mA
0.6mA
0.3mA
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(mA)
Fig.3 DC current gain vs. collector
current
5
500
10
20
50 100 200
500 1A 2A
200
100
50
20
Ta
=25°C
VCE
=3V
1V
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(mV
)
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation
voltage vs. collector current
500
20
200
100
50
5
10 20
50 100 200
500 1A 2A
Ta
=25°C
10
20
IC/IB
=50
BASE
SATURATION
VOLTAGE
:
V
BE(sat)
(V)
COLLECTOR CURRENT : IC (mA)
Fig.5 Collector-emitter saturation
voltage vs. collector current
5
1
2
0.2
0.5
0.1
10 20
50 100 200
500 1A 2A
Ta
=25°C
IC/IB
=10
EMITTER CURRENT : IE (mA)
TRANSITION
FREQUENCY
:
f
T
(MHz)
Fig.6 Transition frequency vs. emitter
current
-2
1
200
5 10 20 50 100200 500 1A
500
1000
100
50
20
Ta
=25°C
VCE
=5V
0.5
200
10
500
1000
100
20
50
12
5
10
20
Ta
=25°C
f
=1MHz
IE
=0A
IC
=0A
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE
: VEB (V)
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(p
F)
EMITTER
INPUT
CAPACITANCE
:
Cib
(pF)
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Cib
Cob
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.8 Safe operating area
5
0.1
50
2
0.2
0.5
1
0.1
0.05
0.2
0.5
1
2
5
10
20
0.01
0.02
(2SD1758)
PW=100ms
TC
=25°C
Single
nonrepetitive
pulse
Ic Max
DC
Ic Max Pulse
Ta
=25°C
Single
nonrepetitive
pulse
P
W=
10ms
P
W=
100ms
0.2
0.5
1
2
5
10
20
50
3
2
1
0.1
0.2
0.5
0.05
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR
CURRENT
:
I
C
(A)
Fig.9 Safe operating area
(2SD1862)
相關(guān)PDF資料
PDF描述
2SD1758TLR 2000 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1759TL 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1760F5TLQ 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1760TL/R 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1760TLQ 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD1759TL 功能描述:達(dá)林頓晶體管 NPN 40V 2A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
2SD1760FRATLR 制造商:ROHM SEMICONDUCTOR 功能描述:HIGH REL TRANS GP BJT NPN 50V 3A TR
2SD1760TL/Q 制造商:ROHM Semiconductor 功能描述:3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1760TLP 功能描述:兩極晶體管 - BJT DVR NPN 50V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SD1760TLQ 功能描述:兩極晶體管 - BJT D-PAK;BCE NPN;DRIVER SMT HFE RANK Q RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2