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參數(shù)資料
| 型號： | 2SD1758TL/R |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CPT3, SC-63, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 151K |
| 代理商： | 2SD1758TL/R |
1/2
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2010 ROHM Co., Ltd. All rights reserved.
2010.04 - Rev.C
Medium power transistor (32V, 2A)
2SD1758 / 2SD1862
Features
Dimensions (Units : mm)
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements the 2SB1182 / 2SB1240
Structure
Epitaxial planar type NPN silicon transistor
Absolute maximum ratings (Ta=25
C)
2SD1758
2SD1862
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector
power
dissipation
1 Single pulse, PW=20ms
2 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm2 or lager.
Parameter
Symbol
Limits
Unit
VCBO
40
V
VCEO
32
V
VEBO
5V
IC
2
A (DC)
2.5
A (Pulse)
1
Tj
150
°C
Tstg
55 to +150
°C
PC
1W
2
10
W (TC
=25°C)
Electrical characteristics (Ta=25
C)
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
40
32
5
0.5
100
30
1
0.8
390
VIC
=50μA
IC
=1mA
IE
=50μA
VCB
=20V
VEB
=4V
IC/IB
=2A/0.2A
VCE
=5V, IE=50mA, f=100MHz
VCE
=3V, IC=0.5A
VCB
=10V, IE=0A, f=1MHz
V
μA
V
MHz
pF
Typ.
Max.
Unit
Conditions
120
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
0.1
+0.2
0.1
+0.2
+
0.3
0.1
2.3
±0.2
2.3
±0.2
0.65
±0.1
0.9
0.75
1.0
±0.2
0.55
±0.1
9.5
±
0.5
5.5
1.5
±
0.3
2.5
1.5
2.3
0.5
±0.1
6.5
±0.2
5.1
C0.5
(3)
(2)
(1)
0.9
1.0
6.8
±0.2
2.5
±0.2
1.05
0.45
±0.1
2.54 2.54
0.5
±0.1
0.9
4.4
±
0.2
14.5
±
0.5
(1)
(2)
(3)
0.65Max.
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
2SD1758
2SD1862
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1759TL | 功能描述:達(dá)林頓晶體管 NPN 40V 2A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2SD1760FRATLR | 制造商:ROHM SEMICONDUCTOR 功能描述:HIGH REL TRANS GP BJT NPN 50V 3A TR |
| 2SD1760TL/Q | 制造商:ROHM Semiconductor 功能描述:3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1760TLP | 功能描述:兩極晶體管 - BJT DVR NPN 50V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1760TLQ | 功能描述:兩極晶體管 - BJT D-PAK;BCE NPN;DRIVER SMT HFE RANK Q RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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