參數(shù)資料
型號(hào): 2SD1760TL/R
元件分類(lèi): 小信號(hào)晶體管
英文描述: 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 89K
代理商: 2SD1760TL/R
2SD1760 / 2SD1864
Transistors
Power Transistor (50V, 3A)
2SD1760 / 2SD1864
!
Features
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements the 2SB1184 / 2SB1243.
!
Structure
Epitaxial planar type
NPN silicon transistor
!
External dimensions (Units : mm)
(1) Base
(2) Collector
(3) Emitter
(1) Emitter
(2) Collector
(3) Base
ROHM : CPT3
EIAJ : SC-63
ROHM : ATV
1.0
6.8
±0.2
2.5
±0.2
1.05
0.45
±0.1
2.54 2.54
0.5
±0.1
0.9
4.4
±
0.2
14.5
±
0.5
(1)
(2)
(3)
0.65Max.
2SD1760
2SD1864
0.1
+0.2
0.1
+0.2
+
0.3
0.1
2.3
±0.2
2.3
±0.2
0.65
±0.1
0.9
0.75
1.0
±0.2
0.55
±0.1
9.5
±
0.5
5.5
1.5
±
0.3
2.5
1.5
2.3
0.5
±0.1
6.5
±0.2
5.1
C0.5
(3)
(2)
(1)
0.9
!
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
Limits
Unit
VCBO
60
V
VCEO
50
V
VEBO
5V
IC
3
A (DC)
4.5
A (Pulse)
1
Tj
150
°C
Tstg
55~+150
°C
2SD1864
2SD1760
1
15
W (Tc
=25°C)
2
PC
1 Single pulse, PW=100ms
2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
W
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power
dissipation
相關(guān)PDF資料
PDF描述
2SD1760TLQ 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1864TV2P 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1762D 3 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220FP
2SD1762/E 3 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220FP
2SD1762F 3 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220FP
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