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參數資料
| 型號： | 2SD1760TL/R |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數： | 3/4頁 |
| 文件大小： | 89K |
| 代理商： | 2SD1760TL/R |
2SD1760 / 2SD1864
Transistors
COLLECTOR CURRENT : IC
(A)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(sat)
(V)
BASE
SATURATION
VOLTAGE
:
V
BE
(sat)
(V)
Fig.7 Collector-emitter saturation
voltage vs. collector current
Base-emitter saturation voltage
vs. collector current
0.01 0.02 0.05 0.1 0.2 0.5
1
2
5
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
lC/lB = 10
VBE (sat)
VCE (sat)
Ta =
25°C
100
°C
25
°C
25
°C
Ta = 100
°C
25°C
EMITTER CURRENT :
IE (mA)
TRANSITION
FREQUENCY
:
f
T(MHz)
Fig.8 Gain bandwidth product vs.
emitter current
1
2
5
10 20
50 100 200
5001000
1000
500
200
50
20
100
10
2
5
1
Ta = 25
°C
VCE
= 5V
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF)
COLLECTOR TO BASE VOLTAGE : VCB
(V)
Fig.9 Collector output capacitance
vs. collector-base voltage
0.1 0.2
0.5
1
2
5
10
20
50 100
100
200
500
1000
10
20
50
2
5
1
Ta = 25
°C
f = 1MHz
IE
= 0A
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.10 Safe operating area
(2SD1760)
0.1
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
0.2
0.5
1
2
5
10 20
50 100
Ta = 25
°C
Single pulse
P
W
=
10ms
P
W
=
100ms
DC
VCE=5v
IC=0.2A
1
10
1sec 10sec 100sec
100
1
0.1
10
100
TIME : T
(ms)
TRANSIENT
THERMAL
RESISTANCE
:
R
th
(°
C/W)
Fig.11 Transient thermal resistance
(2SD1760)
0.2
0.5
1
2
5
10 20
50 100
5
2
1
0.1
0.2
0.5
0.02
0.05
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
COLLECTOR
CURRENT
:
I
C
(A)
Ta=25
°C
Single
nonrepetitive
pulse
Pw=10ms
Pw=100ms
DC
Fig.12 Safe operating area
(2SD1864)
1
10
100
1
10sec 100sec 1000sec
10
1
100
0.1
TIME : T
(ms)
TRANSIENT
THERMAL
RESISTANCE
:
R
th
(°
C/W)
Fig.13 Transient thermal resistance
(2SD1864)
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參數描述 |
|---|---|
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