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參數資料
| 型號： | 2SD1755Q |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, I-G1, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 249K |
| 代理商： | 2SD1755Q |
Power Transistors
1
Publication date: September 2003
SJD00227BED
2SD1755
Silicon NPN epitaxial planar type
For power amplification with high forward current transfer ratio
■ Features
High forward current transfer ratio h
FE which has satisfactory
linearity
High emitter-base voltage (Collector open) V
EBO
I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C = 25°C ± 3°C
7.0±0.3
3.5±0.2
0 to 0.15
12.6
±
0.3
7.2
±
0.3
2.5
±
0.2
2.5
±
0.2
(1.0)
1.0
±
0.2
3.0±0.2
2.0±0.2
1.1±0.1
0.75±0.1
0.9±0.1
0 to 0.15
0.4±0.1
2.3±0.2
4.6±0.4
123
Unit: mm
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Note) Self-supported type package is also prepared.
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
100
V
Collector-emitter voltage (Base open)
VCEO
60
V
Emitter-base voltage (Collector open)
VEBO
15
V
Collector current
IC
6A
Peak collector current
ICP
12
A
Base current
IB
3A
Collector power dissipation
PC
15
W
Ta
= 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 25 mA, IB = 060
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 100 V, I
E
= 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 15 V, IC = 0
100
A
Forward current transfer ratio *
hFE
VCE = 4 V, IC = 1 A
300
2 000
Collector-emitter saturation voltage
VCE(sat)
IC
= 5 A, I
B
= 0.1 A
0.5
V
Transition frequency
fT
VCE = 12 V, IC = 0.5 A, f = 10 MHz
25
MHz
Turn-on time
ton
IC = 5 A, IB1 = 0.1 A, IB2 = 0.1 A
0.3
s
Storage time
tstg
VCC
= 50 V
1.5
s
Fall time
tf
0.6
s
Rank
Q
P
hFE
300 to 1 200
800 to 2 000
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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| 2SD1757KT146 | 制造商:ROHM Semiconductor 功能描述: |
| 2SD1757KT146Q | 功能描述:兩極晶體管 - BJT NPN 15V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1757KT146R | 功能描述:兩極晶體管 - BJT NPN 15V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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