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參數資料
| 型號： | 2SD1695 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 中文描述： | NPN硅外延晶體管（達林頓接線）低頻功率放大器和低速開關 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 104K |
| 代理商： | 2SD1695 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
Document No. D16138EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD1695
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
The 2SD1695 is a Darlington connection transistor and
incorporates a dumper diode between the collector and emitter and
a constant voltage diode and protection elements between the
collector and base. This transistor is ideal for drives in solenoid and
actuators.
FEATURES
On-chip protection elements enable time and cost reduction.
C to E: Dumper diode
C to B: Constant diode
Low collector saturation voltage
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
31
±
4
V
Collector to emitter voltage
V
CEO
31
±
4
V
Emitter to base voltage
V
EBO
8.0
V
Collector current (DC)
I
C(DC)
±
2.0
A
Collector current (pulse)
I
C(pulse)
*
±
3.0
A
Base current (DC)
I
B(DC)
0.2
A
Total power dissipation
P
T
(Ta = 25
°
C)
1.3
W
Total power dissipation
P
T
(Tc = 25
°
C)
10
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
* PW
≤
10 ms, duty cycle
≤
50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Emitter
2. Collector
3. Base
4. Collector (fin)
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| 2SD1701L | TRANSISTOR | BJT | DARLINGTON | NPN | 70V V(BR)CEO | 800MA I(C) | TO-92 |
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相關代理商/技術參數 |
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|---|---|
| 2SD1697 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SP-8 100V .8A 1W ECB |
| 2SD1697-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1699-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN Transistor,80V,0.8A,P-MINIMOLD3 制造商:Renesas 功能描述:0 |
| 2SD1699-T1-AZ(TQ) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SD1699-T1-AZ(TR) | 制造商:Renesas Electronics 功能描述:NPN |
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