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參數(shù)資料
| 型號(hào)： | 2SD1209 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial, Darlington |
| 中文描述： | npn型硅外延，達(dá)林頓 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 31K |
| 代理商： | 2SD1209 |
2SD1209(K)
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
P
C
Tj
60
V
Collector to emitter voltage
60
V
Emitter to base voltage
7
V
Collector current
1
A
Collector peak current
2
A
Collector power dissipation
0.9
W
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
60
—
—
V
I
C
= 0.1 mA, I
E
= 0
Collector cutoff current
I
CEO
I
EBO
h
FE
V
CE(sat)
—
—
100
μ
A
μ
A
V
CE
= 60 V, R
BE
=
∞
V
EB
= 7 V, I
C
= 0
V
CE
= 3 V, I
C
= 0.5 A*
1
I
C
= 500 mA, I
B
= 0.5 mA*
1
Emitter cutoff current
—
—
100
DC current transfer ratio
4000
—
—
Collector to emitter saturation
voltage
—
—
1.5
V
Base to emitter saturation
voltage
Note:
1. Pulse test
V
BE(sat)
—
—
2.0
V
I
C
= 500 mA, I
B
= 0.5 mA*
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1209K | Silicon NPN Epitaxial, Darlington |
| 2SD1225 | 2SD1225 |
| 2SD1226 | Medium Power Amp. Epitaxial Planar NPN Silicon Transistors |
| 2SD1859 | Medium Power Amp. Epitaxial Planar NPN Silicon Transistors |
| 2SD1226M | Medium Power Amp. Epitaxial Planar NPN Silicon Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1209(K) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1A I(C) | TO-92 |
| 2SD1209K | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTORTO-92MOD60V 1A .9W ECB |
| 2SD1209KTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial, Darlington |
| 2SD1210 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR |
| 2SD1211 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type(For low-frequency amplification) |
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