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參數(shù)資料
| 型號(hào)： | 2SC6062 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 5000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-3S1A, 3 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 185K |
| 代理商： | 2SC6062 |
2SC6062
2006-11-16
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
－
0.1
μA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
－
0.1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
30
－
V
hFE (1)
VCE = 2 V, IC = 0.5 A
250
－
400
DC current gain
hFE (2)
VCE = 2 V, IC = 1.6 A
120
－
Collector emitter saturation voltage
VCE (sat)
IC = 1.6 A, IB = 53 mA
－
0.12
V
Base-emitter saturation voltage
VBE (sat)
IC = 1.6 A, IB = 53 mA
－
1.1
V
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f =1MHZ
－
35
－
pF
Rise time
tr
－
55
－
Storage time
tstg
－
310
－
Switching time
Fall time
tf
See Figure 1 circuit diagram
VCC≒12 V, RL = 7.5 Ω
IB1 = IB2 = 53 mA
－
25
－
ns
Figure 1 Switching Time Test Circuit & Timing Chart
Marking
IB2
IB1
20
μs
Output
Input
IB2
IB1
R
L
VCC
Duty cycle
< 1%
W R
Part No. (or abbreviation code)
Lot code (month)
Lot code (year)
Dot: even year
No dot: odd year
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC6062(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:SILICON NPN EPITAXIAL TYPE |
| 2SC6064 | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications |
| 2SC6065 | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications |
| 2SC6065-AN | 制造商:SANYO 功能描述:TRANSISTOR, NPN, 80V, 2.5A, SC-71 Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 80V 2.5A SC-71 |
| 2SC607 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:PNP/NPN SILICON EPITAXIAL TRANSISTOR |
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