參數(shù)資料
型號: 2SC6076
元件分類: 功率晶體管
英文描述: 3 A, 80 V, NPN, Si, POWER TRANSISTOR
封裝: LEAD FREE, 2-7J1A, 3 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 199K
代理商: 2SC6076
2SC6076
2006-11-16
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6076
Power Amplifier Applications
Power Switching Applications
Low collector saturation voltage: VCE (sat) = 0.5 V (max)(IC = 1A)
High-speed switching: tstg = 0.4 s (typ)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
160
V
Collector-emitter voltage
VCEX
160
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
9
V
DC
IC
3
A
Collector current
Pulse
ICP
5
A
Base current
IB
1.5
A
Collector power dissipation
Tc = 25℃
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight:0.36g(typ)
1 : BASE
2 : COLLECTOR(HEAT SINK)
3 : EMITTER
相關(guān)PDF資料
PDF描述
2SC6077 3 A, 80 V, NPN, Si, POWER TRANSISTOR
2SC6084 5 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SC6091 8 A, 700 V, NPN, Si, POWER TRANSISTOR
2SC6095 2500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC6095 2500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC6076(TE16L1,NQ) 制造商:Toshiba 功能描述:Cut Tape 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN 80V 3A hfe180-450 0.4us
2SC6076(TE16L1,NV) 功能描述:TRANS NPN 80V 3A PW MOLD 制造商:toshiba semiconductor and storage 系列:- 包裝:剪切帶(CT) 零件狀態(tài):有效 晶體管類型:NPN 電流 - 集電極(Ic)(最大值):3A 電壓 - 集射極擊穿(最大值):80V 不同?Ib,Ic 時的?Vce 飽和值(最大值):500mV @ 100mA,1A 電流 - 集電極截止(最大值):1μA(ICBO) 不同?Ic,Vce?時的 DC 電流增益(hFE)(最小值):180 @ 500mA,2V 功率 - 最大值:10W 頻率 - 躍遷:150MHz 安裝類型:表面貼裝 封裝/外殼:TO-252-3,DPak(2 引線+接片),SC-63 供應商器件封裝:PW-MOLD 標準包裝:1
2SC6077 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT Process)
2SC6078 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT Process)
2SC6078(TP,F) 制造商:Toshiba 功能描述:NPN Cut Tape