參數(shù)資料
型號: 2SC6062
元件分類: 小信號晶體管
英文描述: 5000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: 2-3S1A, 3 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 185K
代理商: 2SC6062
2SC6062
2006-11-16
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6062
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
High-DC current gain: hFE = 250 to 400 (IC = 0.5 A)
Low-collector-emitter saturation: VCE (sat) = 0.12 V (max)
High-speed switching: tf = 25 ns (typ)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEX
50
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
7
V
DC
IC
5
A
Collector current
Pulse
ICP
10
A
Base current
IB
0.5
A
t = 10s
1.25
W
Collector power
dissipation (Note 1)
DC
PC
0.8
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Mounted on FR4 board (glass epoxy, 1.6mm thick, Cu area: 645 mm
2)
Note 2:Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
0
0.
1
2
.9±
0.2
1.6-0.1
1
.9±
0.2
2.8-0.3
0.1
0
.05
0.7
±
0.
05
0.
0
.1
3
2
1
0
.95
0.95
+0.2
0.1
5
JEDEC
JEITA
TOSHIBA
2-3S1A
Weight:0.01g(typ)
1. Base
2. Emitter
3. Collector
相關(guān)PDF資料
PDF描述
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