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參數(shù)資料
| 型號： | 2SC6033 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon NPN Epitaxial Type |
| 中文描述： | 東芝晶體硅npn型外延式 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 211K |
| 代理商： | 2SC6033 |
2SC6033
2004-07-01
2
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
=
100 V, I
E
=
0
0.1
μ
A
Emitter cut-off current
I
EBO
V
EB
=
6 V, I
C
=
0
0.1
μ
A
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
=
10 mA, I
B
=
0
50
V
h
FE
(1)
V
CE
=
2 V, I
C
=
0.3 A
250
400
DC current gain
h
FE
(2)
V
CE
=
2 V, I
C
=
1.0 A
120
Collector-emitter saturation voltage
V
CE (sat)
I
C
=
1.0 A, I
B
=
33 mA
0.18
V
Base-emitter saturation voltage
V
BE (sat)
I
C
=
1.0 A, I
B
=
33 mA
1.10
V
Collector output capacitance
C
ob
V
CB
=
10 V, I
E
=
0, f = 1MHz
18
pF
Rise time
t
r
25
Storage time
t
stg
470
Switching time
Fall time
t
f
See Figure 1.
V
CC
～
20 V, R
L
=
20
I
B1
=
I
B2
=
33 mA
38
ns
Figure 1 Switching Time Test Circuit & Timing Chart
Marking
W X
Part No. (or abbreviation code)
Lot code (month)
Lot code (year)
Dot: even year
No dot: odd year
I
B2
I
B1
20
μ
s
Output
Input
I
B2
I
B1
R
L
V
CC
Duty cycle
<
1%
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| 2SC6033(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN 50V 2.5A hfe250-400 38ns |
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| 2SC6034(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 285V 1A 3-Pin MSTM |
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