參數(shù)資料
型號: 2SC5863
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon NPN epitaxial planar type
中文描述: 70 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN
文件頁數(shù): 1/3頁
文件大小: 83K
代理商: 2SC5863
1
Publication date: November 2002
SJC00290AED
Transistors
2SC5863
Silicon NPN epitaxial planar type
For general amplification
Features
High collector-emitter voltage (Base open) V
CEO
High transition frequency f
T
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
300
V
Collector-emitter voltage (Base open)
300
V
Emitter-base voltage (Collector open)
V
EBO
7
V
Collector current
I
C
I
CP
70
mA
Peak collector current
100
mA
Collector power dissipation
P
C
200
mW
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
V
EBO
I
C
=
100
μ
A, I
B
=
0
I
E
=
1
μ
A, I
C
=
0
V
CE
=
120 V, I
B
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
50 mA, I
B
=
5 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
300
V
Emitter-base voltage (Collector open)
7
V
Collector-emitter cutoff current (Base open)
I
CEO
1
μ
A
Forward current transfer ratio
*
h
FE
60
220
Collector-emitter saturation voltage
V
CE(sat)
C
ob
1.2
V
Collector output capacitance
(Common base, input open circuited)
10
pF
Transition frequency
f
T
V
CB
=
10 V, I
E
=
10 mA, f
=
200 MHz
50
80
MHz
Rank
Q
R
h
FE
60 to 150
100 to 220
0.40
+0.10
(
1
+
2
+
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
0.16
+0.10
0
±
0
5
10
0
1
+
1
+
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: 7H
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
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