參數(shù)資料
型號: 2SC5885
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon NPN triple diffusion mesa type
中文描述: 6 A, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: TO-220H, 3 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 64K
代理商: 2SC5885
Power Transistors
2SC5885
Silicon NPN triple diffusion mesa type
1
Publication date: March 2004
SJD00312AED
φ
3.2
±
0.1
9.9
±
0.3
4.6
±
0.2
2.9
±
0.2
1.25
±
0.1
2.6
±
0.1
0.7
±
0.1
0.76
±
0.06
1.45
±
0.15
1.2
±
0.15
0.75
±
0.1
2.54
±
0.2
5.08
±
0.4
1
+
-
0
1
±
0
3
±
0
8
±
0
1
±
0
S
2
±
0
4
±
0
7
°
1
2
3
Horizontal deflection output for TV, CRT monitor
I
Features
High breakdown voltage: V
CBO
1
500 V
Wide safe operation area
Built-in dumper diode
I
Absolute Maximum Ratings
T
C
=
25
°
C
I
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Unit: mm
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Emitter-base voltage (Collector open)
V
EBO
I
E
=
500 mA, I
C
=
0
I
F
=
3 A
V
CB
=
1
000 V, I
E
=
0
V
CB
=
1
500 V, I
E
=
0
V
CE
=
5 V, I
C
=
3 A
I
C
=
3 A, I
B
=
0.75 A
I
C
=
3 A, I
B
=
0.75 A
V
CE
=
10 V, I
C
=
0.1 A, f
=
0.5 MHz
I
C
=
3 A, Resistance loaded
I
B1
=
0.75 A, I
B2
=
1.5 A
5
V
Forward voltage
V
F
2
V
Collector-base cutoff current (Emitter open)
I
CBO
50
μ
A
1
mA
Forward current transfer ratio
h
FE
5
10
Collector-emitter saturation voltage
V
CE(sat)
V
BE(sat)
2.5
V
Base-emitter saturation voltage
1.5
V
Transition frequency
f
T
3
MHz
Storage time
t
stg
t
f
5.0
μ
s
μ
s
Fall time
0.5
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
1
500
V
Collector-emitter voltage (E-B short)
V
CES
1
500
V
Emitter-base voltage (Collector open)
V
EBO
I
B
5
V
Base current
3
A
Collector current
I
C
6
A
Peak collector current
*
I
CP
P
C
9
A
Collector power dissipation
30
W
T
a
=
25
°
C
2
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
1: Base
2: Collector
3: Emitter
TO-220H Package
Note)*: Non-repetitive peak collector current
Internal Connection
B
C
E
Marking Symbol: C5885
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