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參數(shù)資料
| 型號： | 2SC5856 |
| 元件分類： | 功率晶體管 |
| 英文描述： | Si, POWER TRANSISTOR |
| 封裝： | 2-16E3A, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 197K |
| 代理商： | 2SC5856 |
2SC5856
2004-5-18
1
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5856
HORIZONTAL DEFLECTION OUTPUT FOR
SUPER HIGH RESOLUTION
DISPLAY, COLOR TV, DIGITAL TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage
: VCBO = 1500 V
Low Saturation Voltage
: VCE (sat) = 3 V (max)
High Speed
: tf(2) = 0.1 s (typ.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
CollectorBase Voltage
VCBO
1500
V
CollectorEmitter Voltage
VCEO
700
V
EmitterBase Voltage
VEBO
5
V
DC
IC
14
Collector Current
Pulse
ICP
28
A
Base Current
IB
7
A
Collector Power Dissipation
PC
55
W
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
55~150
°C
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Min
Typ.
Max
UNIT
Collector Cutoff Current
ICBO
VCB = 1500 V, IE = 0
―
1
mA
Emitter Cutoff Current
IEBO
VEB = 5 V, IC = 0
―
100
A
Collector Emitter Breakdown Voltage
V (BR) CEO IC = 10 mA, IB = 0
700
―
V
hFE (1)
VCE = 5 V, IC = 2 A
20
―
50
hFE (2)
VCE = 5 V, IC = 7.5 A
6.5
―
12.5
DC Current Gain
hFE (3)
VCE = 5 V, IC = 11 A
4.5
―
7.8
―
CollectorEmitter Saturation Voltage
VCE (sat)
IC = 11 A, IB = 2.75 A
―
3
V
BaseEmitter Saturation Voltage
VBE (sat)
IC = 11 A, IB = 2.75 A
―
1.0
1.4
V
Transition Frequency
fT
VCE = 10 V, IC = 0.1 A
―
2
―
MHz
Collector Output Capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
180
―
pF
Storage Time
tstg(1)
―
3.5
―
Fall Time
tf(1)
ICP = 7.5 A , IB1 (end) = 1.0 A
fH = 32 kHz
―
0.25
―
s
Storage Time
tstg(2)
―
1.8
―
Switching Time
Fall Time
tf(2)
ICP = 6.5 A, IB1 (end) = 0.9 A
fH = 100 kHz
―
0.1
―
s
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
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