參數(shù)資料
型號(hào): 2SC5668-T1FB
元件分類: 小信號(hào)晶體管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: ULTRA SUPER MINIMOLD PACKAGE-3
文件頁(yè)數(shù): 12/18頁(yè)
文件大小: 87K
代理商: 2SC5668-T1FB
Data Sheet P14854EJ1V0DS00
3
2SC5668
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25
°°°°C)
Mounted on Glass Epoxy Board
(1.08 cm
2
× 1.0 mm (t) )
200
150
115
100
50
0
25
50
75
100
125
150
Total
Power
Dissipation
P
tot
(mW)
Ambient Temperature TA (C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
f = 1 MHz
0.5
0.4
0.3
0.2
0.1
01
2
3
4
5
Reverse
Transfer
Capacitance
C
re
(pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
VCE = 2 V
40
30
20
10
0
0.6
0.4
0.2
0.8
1.0
1.2
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
f = 2 GHz
25
20
15
10
5
0
10
1
100
Gain
Bandwidth
Product
f
T
(GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
2 V
VCE = 1 V
1 000
100
10
0.001
1
10
0.01
0.1
100
DC
Current
Gain
h
FE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 2 V
40
30
20
10
01
2
34
5
Collector
Current
I
C
(mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
IB 50 A step
IB = 50 A
250 A
450 A
40
30
20
10
01
2
34
5
Collector
Current
I
C
(mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
IB 50 A step
IB = 50 A
250 A
450 A
相關(guān)PDF資料
PDF描述
2SC5668-T1FB-A L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5674-T3FB-A S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5674-T3FB S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5674-T3FB-A S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5674-FB-A S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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