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參數(shù)資料
| 型號： | 2SC5668-T1FB |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ULTRA SUPER MINIMOLD PACKAGE-3 |
| 文件頁數(shù)： | 11/18頁 |
| 文件大?。?/td> | 87K |
| 代理商： | 2SC5668-T1FB |
Data Sheet P14854EJ1V0DS00
2
2SC5668
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
–
100
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
–
100
nA
DC Current Gain
hFE
Note 1
VCE = 2 V, IC = 5 mA
50
70
100
–
RF Characteristics
Gain Bandwidth Product
fT
VCE = 2 V, IC = 20 mA, f = 2 GHz
18
21
–
GHz
Insertion Power Gain (1)
S21e2 VCE = 1 V, IC = 10 mA, f = 2 GHz
9.0
11.0
–
dB
Insertion Power Gain (2)
S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz
9.5
11.5
–
dB
Noise Figure
NF
VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
–1.1
1.5
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 2 V, IE = 0 mA, f = 1 MHz
–
0.24
0.30
pF
Maximum Available Power Gain
MAG.
Note 3
VCE = 2 V, IC = 20 mA, f = 2 GHz
–
12.5
–
dB
Maximum Stable Power Gain
MSG.
Note 4
VCE = 2 V, IC = 20 mA, f = 2 GHz
–
13.5
–
dB
Note 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2 %
2. Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when
the emitter is connected to the guard pin
3. MAG. =
4. MSG. =
hFE CLASSIFICATION
Rank
FB
Marking
UB
hFE Value
50 to 100
(k –
√√√√ (k2 – 1) )
S21
S12
S21
S12
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