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參數(shù)資料
| 型號： | 2SC5674-T3FB |
| 元件分類： | 小信號晶體管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | LEADLESS MINIMOLD PACKAGE-3 |
| 文件頁數(shù)： | 1/23頁 |
| 文件大小： | 100K |
| 代理商： | 2SC5674-T3FB |
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC5674
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN LEAD-LESS MINIMOLD
Document No. PU10133EJ01V0DS (1st edition)
Date Published April 2002 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2002
FEATURES
Ideal for 3 GHz or higher OSC applications
Low noise, high gain
fT = 21.0 GHz TYP.,
S21e2 = 11.5 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz
NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = Zopt
3-pin lead-less minimold package (1005 PKG)
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5674
50 pcs (Non reel)
8 mm wide embossed taping
2SC5674-T3
10 kpcs/reel
Pin 2 (Base) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
15
V
Collector to Emitter Voltage
VCEO
3.3
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
35
mA
Total Power Dissipation
Ptot
Note
115
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy PCB
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
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