- 您現在的位置：買賣IC網 > PDF目錄33418 > 2SC5651 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF資料下載
參數資料
| 型號： | 2SC5651 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC, M23, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 19K |
| 代理商： | 2SC5651 |
NE688M23
NPN SILICON TRANSISTOR
NEW MINIATURE M23 PACKAGE:
– World's smallest transistor package footprint —
leads are completely underneath package body
– Low profile/0.55 mm package height
– Ceramic substrate for better RF performance
HIGH GAIN BANDWIDTH PRODUCT:
fT = 9.5 GHz
LOW NOISE FIGURE:
NF = 1.7 dB at 2 GHz
HIGH COLLECTOR CURRENT:
IC MAX = 100 mA
FEATURES
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M03
PRELIMINARY DATA SHEET
PART NUMBER
NE688M23
EIAJ1 REGISTERED NUMBER
2SC5651
PACKAGE OUTLINE
M23
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
fT
Gain Bandwidth at VCE = 1 V, IC = 3 mA, f = 2 GHz
GHz
4
5
NF
Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz
dB
1.9
2.5
|S21E|2
Insertion Power Gain at VCE = 1 V, IC = 3 mA, f = 2 GHz
dB
3
4
hFE2
Forward Current Gain at VCE = 1 V, IC = 3 mA
80
145
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
A
0.1
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
A
0.1
CRE3
Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz
pF
0.7
0.8
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
California Eastern Laboratories
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤ 350 s, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
DESCRIPTION
The NE688M23 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/ceramic substrate style "M23"
package is ideal for today's portable wireless applications. The
NE688 is also available in chip and six different low cost plastic
surface mount package styles.
0.15
0.2
0.15
2
1
0.25
0.4
0.5
1.0
0.55
0.6
BOTTOM VIEW
3
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC5651 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5656-FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5656 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5658T2LQ | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC1740STPS | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC565400L | 功能描述:TRANS NPN 20VCEO 1A SMINI-3 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC5654G0L | 功能描述:TRANS NPN 20VCEO 1A SMINI-3 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC5658 | 制造商:ROHM Semiconductor 功能描述:150 MA, 50 V, NPN, SI, SMALL SIGNAL TRANSISTOR, VMT3, 3 PIN |
| 2SC5658GT2LR | 制造商:ROHM Semiconductor 功能描述:TRANSISTER 2SC5658GT2LR |
| 2SC5658M3T5G | 功能描述:兩極晶體管 - BJT 100mA 50V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復。