參數(shù)資料
型號(hào)： 2SC5656-FB
元件分類(lèi)： 小信號(hào)晶體管
英文描述： L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件頁(yè)數(shù)： 1/24頁(yè)
文件大?。?/td> 94K
代理商： 2SC5656-FB
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15248EJ1V0DS00 (1st edition)
Date Published December 2000 NS CP(K)
Printed in Japan
2000
NPN SILICON RF TRANSISTOR
2SC5656
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN NON-LEAD MINIMOLD
FEATURES
1006 package employed (1.0
× 0.6 × 0.5 mm)
NF = 1.3 dB TYP.,
S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5656
50 pcs (Non reel)
8 mm wide paper carrier taping
2SC5656-T1
10 kpcs/reel
Pin 3 (collector) face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
15
V
Collector to Emitter Voltage
VCEO
6V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
35
mA
Total Power Dissipation
Ptot
Note
150
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy substrate
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
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