參數(shù)資料
型號(hào)： 2SC5604-T3FB
元件分類(lèi)： 小信號(hào)晶體管
英文描述： L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝： MINIMOLD PACKAGE-3
文件頁(yè)數(shù)： 1/23頁(yè)
文件大?。?/td> 99K
代理商： 2SC5604-T3FB
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC5604
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE AMPLIFIER
3-PIN LEAD-LESS MINIMOLD
Document No. PU10046EJ02V0DS (2nd edition)
Date Published December 2001 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2001
The mark
shows major revised points.
FEATURES
High-gain transistor for buffer amplifier :
S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
fT = 25 GHz “UHS0” (Ultra High Speed Process) technology adopted
3-pin lead-less minimold package (1005 PKG)
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5604
50 pcs (Non reel)
8 mm wide embossed taping
2SC5604-T3
10 kpcs/reel
Pin 2 (Base) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
15
V
Collector to Emitter Voltage
VCEO
6.0
V
Emitter to Base Voltage
VEBO
2.0
V
Collector Current
IC
35
mA
Total Power Dissipation
Ptot
Note
140
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy PCB
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
相關(guān)PDF資料
PDF描述
2SC5604-FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5607 5000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC5614-EB-A UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5614-T3 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5614-T3FB UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC5606-A 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包裝:剪帶 零件狀態(tài):有效 晶體管類(lèi)型:NPN 電壓 - 集射極擊穿（最大值）:3.3V 頻率 - 躍遷:21GHz 噪聲系數(shù)（dB，不同 f 時(shí)的典型值）:1.2dB @ 2GHz 增益:12.5dB 功率 - 最大值:115mW 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:60 @ 5mA，2V 電流 - 集電極（Ic）（最大值）:35mA 安裝類(lèi)型:表面貼裝 封裝/外殼:SOT-523 供應(yīng)商器件封裝:- 標(biāo)準(zhǔn)包裝:1
2SC5606-FB-A 制造商:Renesas Electronics Corporation 功能描述:
2SC5606-T1-A 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 晶體管類(lèi)型:NPN 電壓 - 集射極擊穿（最大值）:3.3V 頻率 - 躍遷:21GHz 噪聲系數(shù)（dB，不同 f 時(shí)的典型值）:1.2dB @ 2GHz 增益:14dB 功率 - 最大值:115mW 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:60 @ 5mA，2V 電流 - 集電極（Ic）（最大值）:35mA 安裝類(lèi)型:表面貼裝 封裝/外殼:SOT-523 供應(yīng)商器件封裝:SOT-523 標(biāo)準(zhǔn)包裝:1
2SC5606-T1-A-FB 制造商:Renesas Electronics Corporation 功能描述:
2SC5611 制造商:Sony Semiconductor Solutions Division 功能描述:
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