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參數(shù)資料
| 型號(hào)： | 2SC5551A |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PCP, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 76K |
| 代理商： | 2SC5551A |
2SC5551A
No. A1118-1/4
Features
High fT : (fT=3.5GHz typ).
Large current : (IC=300mA).
Large allowable collector dissipation (1.3W max).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
40
V
Collector-to-Emitter Voltage
VCEO
30
V
Emitter-to-Base Voltage
VEBO
2V
Collector Current
IC
300
mA
Collector Current (Pulse)
ICP
600
mA
Collector Dissipation
PC
When mounted on ceramic substrate (250mm2
0.8mm)
1.3
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=20V, IE=0A
1.0
μA
Emitter Cutoff Current
IEBO
VEB=1V, IC=0A
5.0
μA
Continued on next page.
SANYO Semiconductors
DATA SHEET
www.semiconductor-sanyo.com/network
Ordering number : ENA1118
D0209AB TK IM TC-00002042
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
2SC5551A
NPN Epitaxial Planar Silicon Transistor
High-Frequency Medium-Output
Amplifier Applications
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| 2SC5551AE-TD-E | 功能描述:兩極晶體管 - BJT HIGH-CURRENT SWITCHING RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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