參數(shù)資料
型號(hào)： 2SC5409
廠商： NEC Corp.
英文描述： NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
中文描述： npn型外延硅晶體管的微波高增益放大
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 39K
代理商： 2SC5409
2SC5409
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0
0.1
μ
A
Emitter Cut-off Current
I
EBO
V
EB
= 1 V, I
C
= 0
0.1
μ
A
DC Current Gain
h
FE
V
CE
= 2 V, I
C
= 20 mA
Note 1
70
140
Gain Bandwidth Product
f
T
V
CE
= 2 V, I
C
= 20 mA, f = 2.0 GHz
13
16
GHz
Feed-back Capacitance
Cre
V
CB
= 2 V, I
E
= 0, f = 1 MHz
Note 2
0.2
0.3
pF
Insertion Power Gain
|S
21e
|
2
V
CE
= 2 V, I
C
= 20 mA, f = 2.0 GHz
12
14
dB
Noise Figure
NF
V
CE
= 2 V, I
C
= 3 mA, f = 2.0 GHz
1.1
1.8
dB
Rank
FB
Marking
T97
h
FE
70 to 140
Notes 1.
Pulse measurement PW
≤
350
μ
s, duty cycle
≤
2 %, pulsed
2.
Measured with three-pin bridge, with emitter pin connected to the bridge guard.
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
200
100
0
25
20
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
I
B
=
20 A
15
10
5
0
50
1.0
2.0
3.0
100
150
50
40
30
20
10
0
0.5
1.0
T
A
- Ambient Temperature - °C
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
V
BE
- Base to Emitter Voltage - V
μ
I
C
V
CE
- Collector to Emitter Voltage - V
I
C
P
T
V
CE
=
2 V
1
500
100
50
20
10
200
2
5
10
20
50
100
DC CURRENT GAIN vs.
COLLECTOR CURRENT
I
C
- Collector Current - mA
h
F
V
CE
=
1 V
V
CE
=
2 V
90 mW
Free Air
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