參數(shù)資料
型號(hào)： 2SC5409-T1
廠商： NEC Corp.
英文描述： NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
中文描述： npn型外延硅晶體管的微波高增益放大
文件頁(yè)數(shù)： 1/8頁(yè)
文件大小： 39K
代理商： 2SC5409-T1
1997
PRELIMINARY DATA SHEET
FEATURE
High f
T
16 GHz TYP.
High gain
|S
21e
|
2
= 14 dB TYP.
@f = 2 GHz, V
CE
= 2 V, I
C
= 20 mA
NF = 1.1 dB, @f = 2 GHz V
CE
= 2 V, I
C
= 3 mA
6-pin Small Mini Mold Package
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
2SC5409-T1
3 kpcs/reel
8-mm wide emboss taping, 6-pin
(collector) feed hole direction
Remark
To order evaluation samples, consult your NEC sales person-
nel (supported in 50-pcs units).
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
5
V
Collector to Emitter Voltage
V
CEO
3
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
30
mA
Total Power Dissipation
P
T
90
mW
Junction Temperature
T
j
150
°
C
Storage Temperature
T
stg
–65 to +150
°
C
SILICON TRANSISTOR
2SC5409
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE HIGH-GAIN AMPLIFICATION
Document No. P12096EJ1V0DS00 (1st edition)
Date Published April 1997 N
Printed in Japan
2.1±0.1
1.25±0.1
2
0
0
1
B
0
E
E
C
E
E
0
0
+
0
–
+
0
–
T
PACKAGE DIMENSIONS (in mm)
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
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