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參數(shù)資料
| 型號(hào)： | 2SC5288 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
| 中文描述： | NPN硅外延晶體管L波段低功率放大器 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大小： | 117K |
| 代理商： | 2SC5288 |
2SC5288
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
I
CBO
V
CB
= 5 V, I
E
= 0
2.5
μ
A
Emitter Cutoff Current
I
EBO
V
EB
= 1 V, I
C
= 0
2.5
μ
A
DC Current Gain
h
FE
V
CE
= 3.6 V, I
C
= 100 mA
Note
60
—
Output Power
P
–1
V
CC
= 3.6 V, f = 1.9 GHz,
23
24
dBm
Power Gain
G
P
I
Cq
= 1 mA (class AB operation)
7
8
dB
Collector Efficiency
η
C
Duty factor 1/8
50
60
%
Note
Pulse Measurement: PW
≤
350
μ
s, Duty cycle
≤
2 %, Pulsed
h
FE
Classification
Rank
FB
Marking
T89
h
FE
more than 60
APPLICATION EXAMPLES
(1) Power amplifier for DECT
+3 dBm
P
O
= 27 dBm
2SC5289
2SC5288
2SC5192
(2) Power amplifier for PHS
+7 dBm
P
L
= 23 dBm
2SC5289
2SC5288
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5288(NE68939) | Voltage Detectors in 4-Bump (2 x 2) Chip-Scale Package |
| 2SC5288-T1 | NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
| 2SC5289 | NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
| 2SC5291 | High-Voltage Switching Applications |
| 2SC5296 | Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5288(NE68939) | 制造商:NEC 制造商全稱:NEC 功能描述:Discrete |
| 2SC5288-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
| 2SC5288-T1-A | 制造商:Renesas Electronics Corporation 功能描述:Cut Tape |
| 2SC5288-T1-A-KB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5289 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
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