參數(shù)資料
型號: 2SC5288
廠商: NEC Corp.
英文描述: NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER
中文描述: NPN硅外延晶體管L波段低功率放大器
文件頁數(shù): 1/12頁
文件大?。?/td> 117K
代理商: 2SC5288
1995
DATA SHEET
SILICON TRANSISTOR
2SC5288
The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital
cordless phones (DECT, PHS, etc.).
FEATURES
P
–1
= 24 dBm TYP.
@f = 1.9 GHz, V
CC
= 3.6 V, I
Cq
= 1 mA (Class AB), Duty = 1/8
4-Pin Mini Mold Package
EIAJ: SC-61
ORDERING INFORMATION
Part Number
Quantity
Packing Style
2SC5288-T1
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face
to perforation side of the tape.
Remark
If you require an evaluation sample, please contact an NEC Sales
Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
V
CBO
9.0
V
Collector to Emitter Voltage
V
CEO
6.0
V
Emitter to Base Voltage
V
EBO
2.0
V
Collector Current
I
C
150
mA
Total Power Dissipation
P
T
200 (CW)
mW
1.0 (duty = 1/8)
Note
W
2.5 (duty = 1/24)
Note
W
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
–65 to +150
C
Note
Pulse period is 10 msec or less.
NPN SILICON EPITAXIAL TRANSISTOR
FOR L-BAND LOW-POWER AMPLIFIER
PACKAGE DRAWING
(Unit: mm)
(
(
0
0
+
2.8
1.5
+0.2
+0.2
2
3
1
4
2
0
+
0
+
T
0
+
1
+
0
0
+
0
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
Document No. P10249EJ2V0DS00 (2nd edition)
Date Published December 1995 P
Printed in Japan
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